15 GHz quadrature voltage controlled oscillator in 130 nm CMOS technology

This paper reports a 15 GHz quadrature voltage controlled oscillator (QVCO) designed in a 130 nm CMOS technology. The phase noise performance of the QVCO and of a phase locked loop (PLL) where the QVCO was inserted were compared with the literature and with telecom standards and commercial products for broadcast satellite applications

A 12GHz 30mW 130nm CMOS Rotary Travelling Wave Voltage Controlled Oscillator

This paper reports a 12GHz Rotary Travelling Wave (RTW) Voltage Controlled Oscillator designed in a 130nm CMOS technology. The phase noise and power consumption performances were compared with the literature and with telecommunication standards for broadcast satellite applications. The RTW VCO exhibits a -106dBc/Hz@1MHz and a 30mW power consumption with a sensibility of 400 MHz/V. Finally, requirements are given for a PLL implementation of the RTW VCO and simulated results are presented

Topology investigation for the low frequency noise compact modelling of bipolar transistors

The low frequency noise (LFN) properties of bipolar transistors are investigated in terms of equivalent input referred, partially correlated noise generators. These properties are studied as a function of the intrinsic noise sources and of the small-signal model topology. Topology invariance and identity properties are identified and their practical implications on the LFN modelling of bipolar transistors are assessed. (C) 2003 Elsevier Science Ltd. All rights reserved

The reliability of compound semiconductor transistors for microwave applications

Dottorato di ricerca in tecnologie dell'informazione. 10. ciclo. Coordinatore G. PicchiConsiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome; Biblioteca Nazionale Centrale - P.za Cavalleggeri, 1, Florence / CNR - Consiglio Nazionale delle RichercheSIGLEITItal

Low Frequency Noise in Microelectronics

Aim of the tutorial is an overview of the low frequency noise in semiconductor devices as bipolar and MOS transistors under a point of view interesting for people working in the field of integrated circuit design and device model card development. The tutorial is organised in three main sections addressing different facets of the low frequency noise in microelectronics: characterization, modelling, and application

X-band silicon integrated radiometer

The demonstration will be focused on a silicon integrated radiometer working in the X-band. The chip, fabricated in a low cost 0.35um BiCMOS technology, was bonded on a test board. The carried out experiment allows to estimate the temperature sensitivity of the radiometer

Esercizi di Elettronica Digitale

Il volume è una raccolta di esercitazioni relative all'analisi di circuiti multivibratori CMOS. L'impostazione del testo è fortemente metodologica con grande rilevanza data al raggiungimento di equazioni di progetto

Quantum Gates for Electronics Engineers

The design of a solid-state quantum processor is nowadays a hot research topic in microelectronics. Like the logic gates in a classical processor, quantum gates serve as the fundamental building blocks for quantum processors. The main goal of the present paper is to deduce the matrix of the main one- and two-qubit quantum gates from the Schrödinger equation. The mathematical formalism is kept as comfortable as possible for electronics engineers. This paper does not cover topics such as dissipations, state density, coherence, and state purity. In a similar manner, this paper also deals with the quantum nature of a quantum processor by leveraging the concept of a finite-state machine, which is a background notion for any electronics engineer